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Proceedings Paper

Changes in surface characteristics of HgCdTe by dry etching
Author(s): Kyung Hun Song; Tae Ho Yoon; Suk-Ryong Hahn; Eui-Tae Kim; J. H. Kwon; Sang Gyu Lee; T. S. Hwang; Y. S. Lee; Jae Mook Kim
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Paper Abstract

The surface of mercury cadmium telluride (Hg1-xcdxTe, x approximately equals 0.2) was etched by electron cyclotron resonance (ECR) plasma utilizing a mixture of CH4 and H2. The etch rate was optimized as a function of mix ratio of H2/CH4 ECR power, total pressure, and DC bias voltage in order to arrive at smooth surface. The etched surface of HgCdTe was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), FT-IR and Hall effect measurements. Optimized etching conditions were 25% CH4, ECR power of 200 watts, total pressure of 5-7 mtorr and bias voltage of -80 V. XPS analysis revealed that atomic concentration of Hg and Te decreased, but that of Cd increased, indicating preferential etching. Also, hall effect measurement indicated increased carrier density, but decreased mobility of HgCdTe.

Paper Details

Date Published: 26 October 1998
PDF: 7 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.327994
Show Author Affiliations
Kyung Hun Song, Paichai Univ. (South Korea)
Tae Ho Yoon, Kwangju Institute of Science and Technology (South Korea)
Suk-Ryong Hahn, Korea Electronics Co. Ltd. (South Korea)
Eui-Tae Kim, Korea Electronics Co. Ltd. (South Korea)
J. H. Kwon, Korea Electronics Co. Ltd. (South Korea)
Sang Gyu Lee, Chungnam National Univ. (South Korea)
T. S. Hwang, Chungnam National Univ. (South Korea)
Y. S. Lee, Agency for Defense Development (South Korea)
Jae Mook Kim, Agency for Defense Development (South Korea)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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