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Proceedings Paper

Monolithic two-color detector for short- and middle-wavelength IR using p-HgCdTe/N-HgCdTe/CdTe/GaAs
Author(s): Seung-Man Park; Jae Mook Kim; Jong-Hyeong Song; Sang-Hee Suh
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Paper Abstract

A new device concept and implementation procedure of a monolithic two-color IR detector using MOVPE grown p-HgCdTe/N- HgCdTe/CdTe/GaAs is discussed. Newly introduced two-color IR detector consists of simple n-p-N structure, which can be realized using simple p-N double layer HgCdTe material. Formation of potential barrier in the conduction band of p-N heterojunction is a key to the successful operation of monolithic two-color IR detector. It prevents photogenerated minority carriers in small band gap region (p-HgCdTe) from diffusing to N-HgCdTe. The monolithic two-color IR detector was firstly fabricated using MOVPE grown p-Hg0.69Cd0.31Te/N-Hg0.64Cd0.36Te/CdTe/GaAs for SW/MWIR. SWIR diode shows RoA value of 752 (Omega) cm2, while MWIR diode shows RoA value of 140 (Omega) cm2.

Paper Details

Date Published: 26 October 1998
PDF: 5 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.327989
Show Author Affiliations
Seung-Man Park, Agency for Defense Development (South Korea)
Jae Mook Kim, Agency for Defense Development (South Korea)
Jong-Hyeong Song, Korea Institute of Science and Technology (South Korea)
Sang-Hee Suh, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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