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Proceedings Paper

Characterization of In-doped CdTe grown by molecular beam epitaxy
Author(s): Tae Won Kang; J. H. Leem; Y. B. Hou; Y. S. Ryu; Ho-Young Lee; H. C. Jeon; J. K. Hyun; C. K. Kang; T. W. Kim
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Paper Abstract

Photoluminescence (PL) measurements on as-grown and hydrogenated In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the optical properties and the hydrogenation effects of In-doped CdTe films. The temperature dependence of the PL intensities for the as-grown In-doped CdTe films show that the peak at 1.590 eV observed at 12 K is related to shallow donor band recombination (D, h). Inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. The PL spectrum for the hydrogenated In-doped CdTe films shows that the intensity of the (D, h) peak decreases dramatically and that their longitudinal optical phonons disappear. These results indicate that the PL intensity and the linewidth of the (D, h) peak in as-grown In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes and that the decrease of the PL intensity of the (D, h) peak for the hydrogenated In-doped CdTe epilayer originates from the passivation effect of the ionized In donor level due to the hydrogenation.

Paper Details

Date Published: 26 October 1998
PDF: 8 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.327988
Show Author Affiliations
Tae Won Kang, Dongguk Univ. (South Korea)
J. H. Leem, Dongguk Univ. (South Korea)
Y. B. Hou, Dongguk Univ. (South Korea)
Y. S. Ryu, Dongguk Univ. (South Korea)
Ho-Young Lee, Dongguk Univ. (South Korea)
H. C. Jeon, Dongguk Univ. (South Korea)
J. K. Hyun, Dongguk Univ. (South Korea)
C. K. Kang, Dongguk Univ. (South Korea)
T. W. Kim, Kwangwoon Univ. (South Korea)

Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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