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Proceedings Paper

Quantitative study of nitrogen doping effect on cyclability of Ge-Sb-Te phase-change optical disks
Author(s): Rie Kojima; Takashi Kouzaki; Toshiyuki Matsunaga; Noboru Yamada
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Paper Abstract

By nitrogen doping into a Ge-Sb-Te phase change optical disk's recording layer, we were able to significantly increase its cyclability. For example, our PD attained, at the maximum, 800,000 overwrite cycles through accurate control of nitrogen concentration. We quantified the nitrogen concentration of recording layer using secondary ion mass spectrometry (SIMS) and determined, from the viewpoint of cyclability, signal amplitude and other parameters, the optimum concentration to be around 2 - 3 at.%. From analyses by thermal desorption mass spectrometry (TDMS) and X-ray diffraction (XD) using powder, we found: (1) nitrogen atoms are mainly bound with Ge to create an amorphous phase of Ge-N; (2) as long as the nitrogen concentration remains around 5 at.%, those Ge, Sb and Te atoms which are not bound with nitrogen form NaCl type crystals. We obtained the following model by combining the results of the above analysis. Nitrogen-doped Ge-Sb-Te recording layer is composed of Ge-Sb-Te grains intermingled with a small quantity of amorphous Ge-N, which exists in the form of a thin film penetrating the grain boundary of Ge-Sb-Te. The Ge-N composing this high-melting-point material layer appears to suppress any micro-material-flow that may occur during overwrite.

Paper Details

Date Published: 23 October 1998
PDF: 10 pages
Proc. SPIE 3401, Optical Data Storage '98, (23 October 1998); doi: 10.1117/12.327951
Show Author Affiliations
Rie Kojima, Matsushita Electric Industrial Co., Ltd. (Japan)
Takashi Kouzaki, Matsushita Technoresearch, Inc. (Japan)
Toshiyuki Matsunaga, Matsushita Technoresearch, Inc. (Japan)
Noboru Yamada, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3401:
Optical Data Storage '98
Shigeo R. Kubota; Tomas D. Milster; Paul J. Wehrenberg, Editor(s)

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