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Proceedings Paper

Optical active gallium arsenide probes for scanning probe microscopy
Author(s): Sven Heisig; W. Steffens; Egbert Oesterschulze
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Paper Abstract

In order to produce microelectromechanical systems on base of gallium arsenide it is necessary to develop novel etching techniques. The conventional dip etching is not suitable to fabricate such systems reliably and with sufficiently small thickness variations. To overcome this problem we used a modified spray etching technique. A comparison between both methods is given.

Paper Details

Date Published: 13 October 1998
PDF: 8 pages
Proc. SPIE 3467, Far- and Near-Field Optics: Physics and Information Processing, (13 October 1998); doi: 10.1117/12.326832
Show Author Affiliations
Sven Heisig, Univ. of Kassel (Japan)
W. Steffens, Univ. of Kassel (Germany)
Egbert Oesterschulze, Univ. of Kassel (Germany)


Published in SPIE Proceedings Vol. 3467:
Far- and Near-Field Optics: Physics and Information Processing
Suganda Jutamulia; Toshimitsu Asakura, Editor(s)

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