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Proceedings Paper

Near-field optical spectroscopy of excitons in single quantum dots
Author(s): Toshiharu Saiki; Kenichi Nishi
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Paper Abstract

InGaAs single quantum dot photoluminescence spectra and images are investigated by using a low-temperature near- field optical microscope. By modifying the commonly used near-field apertured prove, a high spatial resolution and high detection efficiency are achieved simultaneously. Local collection of the emission signal through a 500 nm aperture contributes to the single-dot imaging with a (lambda) /6 resolution, which is a significant improvement over the convention spatially resolved spectroscopy. Tailoring the tapered structure of the near-field probe enables us to obtain the emission spectra of single dots in the weak excitation region, where the carrier injection rate is approximately 107 excitons/s per dot. By employing such a technique, we examine the evolution of single-dot emission spectra with excitation intensity. In addition to the ground-state emission, excited-state and biexciton emissions are observed for higher excitation intensities. By a precise investigations of the excitation power dependences of individual dots, 2D identification of their emission origins is obtained for the first time.

Paper Details

Date Published: 13 October 1998
PDF: 10 pages
Proc. SPIE 3467, Far- and Near-Field Optics: Physics and Information Processing, (13 October 1998); doi: 10.1117/12.326821
Show Author Affiliations
Toshiharu Saiki, Kanagawa Academy of Science and Technology (Japan)
Kenichi Nishi, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3467:
Far- and Near-Field Optics: Physics and Information Processing
Suganda Jutamulia; Toshimitsu Asakura, Editor(s)

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