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Proceedings Paper

Effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55-um InGaAsP semiconductor laser diodes
Author(s): Fatih V. Celebi; M. Sadettin Ozyazici; Kenan Danisman
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Paper Abstract

In this study, different second harmonic distortion (2HD) levels of a 1.55 micrometers , InGaAsP ridge waveguide laser diode are investigated by using a mathematical model based on multi-mode rate equations. The rate equations with an input current i are solved numerically by using fourth order Runge-Kutta algorithm for frequencies ranging from 1 GHz to 10 GHz with 1 GHz steps and the standard parameter values. The important parameters of 1.55 micrometers . InGaAsP semiconductor lasers such as Auger recombination, non- radiative recombination, spontaneous emission lifetime and gain saturation are taken into account. The effects of some parameters on 2HD for different threshold levels are examined and computed graphically.

Paper Details

Date Published: 8 October 1998
PDF: 5 pages
Proc. SPIE 3415, Laser Diodes and Applications III, (8 October 1998); doi: 10.1117/12.326639
Show Author Affiliations
Fatih V. Celebi, Baskent Univ. (Turkey)
M. Sadettin Ozyazici, Gaziantep Univ. (Turkey)
Kenan Danisman, Erciyes Univ. (Turkey)


Published in SPIE Proceedings Vol. 3415:
Laser Diodes and Applications III
Pierre Galarneau, Editor(s)

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