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Proceedings Paper

Suspended thermal oxide trench isolation for SCS MEMS
Author(s): Russell Y. Webb; Scott G. Adams; Noel C. MacDonald
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Paper Abstract

Single-crystal silicon microelectromechanical devices with thermal silicon dioxide isolation segments were fabricated with a SCREAM based process; mechanical and electrical characteristics of these devices were tested. Isolation segments (26 micrometers high, 8 micrometers long, and 2 micrometers wide) have been used to isolate 1 micrometers wide, 22 micrometers high single crystal silicon (SCS) beams. Released isolation segments and Al-Si contacts allow electronics to be embedded within SCS MEMS and bare silicon beams to be used for springs and actuators.

Paper Details

Date Published: 5 October 1998
PDF: 4 pages
Proc. SPIE 3519, Microrobotics and Micromanipulation, (5 October 1998); doi: 10.1117/12.325740
Show Author Affiliations
Russell Y. Webb, Cornell Univ. (United States)
Scott G. Adams, Kionix Inc. (United States)
Noel C. MacDonald, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 3519:
Microrobotics and Micromanipulation
Armin Sulzmann; Bradley J. Nelson, Editor(s)

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