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Proceedings Paper

Imaging technology based on As38S62 thin layers
Author(s): Alexander V. Stronski; Miroslav Vlcek; A. Sklenar
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Paper Abstract

The present paper is concerned with an investigation of the image formation properties of As38S62 thin layers and their application in the surface relief formation. The spectral dependence of the index of refraction n of variously treated samples (virgin, exposed, annealed) was obtained from optical transmission in the spectral region 0.4 - 2.5 micrometers . The energy dependencies of n for variously treated samples were well fitted by the Wemple-DiDomenico dispersion relationship and were used for the estimation of the single-oscillator model parameters. It was found, that exposure as well as annealing causes an increase in refractive index n values over the all spectral region. The values of optical dielectric constant (epsilon) is also increasing. Changes of the single-oscillator model parameters induced by exposure and/or by annealing are discussed on the basis of photo- and thermally induced structural changes, which were directly confirmed by Raman spectroscopy. Such photostructural changes provide good etching selectivity of As32S62 layers in amine based etching solutions. This provided possibility for the fabrication of surface-relief patterns, in particular, diffraction gratings. The results obtained, show that As38S62 inorganic resists can be successfully used in holography and other optical applications.19

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); doi: 10.1117/12.324551
Show Author Affiliations
Alexander V. Stronski, Institute of Semiconductor Physics (Ukraine)
Miroslav Vlcek, Univ. of Pardubice (Czech Republic)
A. Sklenar, Univ. of Pardubice (Czech Republic)

Published in SPIE Proceedings Vol. 3573:
OPTIKA '98: 5th Congress on Modern Optics
Gyorgy Akos; Gabor Lupkovics; Andras Podmaniczky, Editor(s)

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