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Proceedings Paper

In-line x-ray fluorescence metrology of metals and ultrathin barrier layers for ULSI applications
Author(s): Yosi Y. Shacham-Diam; Boris Yokhin; Itzhak Mazor; Avishai Kepten; Roey Shaviv; Ayelet Gabai
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Paper Abstract

X-ray based metrology and inspection can be used for various applications: composition analysis, thin-film thickness measurement, and the determination of crystallographic structure and surface roughness. High resolution imaging is also theoretically possible for defects detection and analysis. In this work we focus on x-ray fluorescence (XRF). We discuss its principles, the system requirements, and its applications for x-ray metrology. Such systems can be installed in an in-line or at-line configuration for the monitoring of interconnects systems, both aluminum na copper based. The measurement can be done over special test sites on the chip itself or on the scribe-lanes. Measurement over active devices is also possible but electron-hole creation in the gate and field oxide limits the maximum allowed irradiation per unit are. In this work we discuss the guidelines for critical dose and minimum measured area that allow proper and fast metrology. It is concluded that both high-speed and damage free XRF metrology is possible.

Paper Details

Date Published: 27 August 1998
PDF: 7 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324424
Show Author Affiliations
Yosi Y. Shacham-Diam, Tel-Aviv Univ. (Israel)
Boris Yokhin, Jordan Valley Applied Radiation Ltd. (Israel)
Itzhak Mazor, Jordan Valley Applied Radiation Ltd. (Israel)
Avishai Kepten, Tower Semiconductors Ltd. (Israel)
Roey Shaviv, Tower Semiconductors Ltd. (Israel)
Ayelet Gabai, Tower Semiconductors Ltd. (Israel)


Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

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