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Proceedings Paper

Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques
Author(s): Yoh-Ichiro Ogita; Hiroshi Shinohara; Tsuyoshi Sawanobori; Masaki Kurokawa
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Paper Abstract

Chemomechanical mirror polishing damages in a subsurface of silicon wafers have been revealed by photoconductivity amplitude with blue-laser/microwave photoconductivity technique and also revealed by photoconductivity technique and also revealed by photoconductivity amplitude and initial carrier lifetime with UV/millimeter photoconductivity decay technique. These noncontact techniques also have revealed subsurface damages as to be drastically influential on gate- oxide layer breakdown in MOSFET.

Paper Details

Date Published: 27 August 1998
PDF: 9 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324421
Show Author Affiliations
Yoh-Ichiro Ogita, Kanagawa Institute of Technology (Japan)
Hiroshi Shinohara, Kanagawa Institute of Technology (Japan)
Tsuyoshi Sawanobori, Kanagawa Institute of Technology (Japan)
Masaki Kurokawa, Kanagawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

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