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Proceedings Paper

Investigation of rod-like defects in MOS 12
Author(s): Ray Goodner; Ping Wang; Fourmun Lee; Ron Ceton; John Rios; Steve Howard
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Paper Abstract

A unique defect type was detected by routine KLA inspection. The shape of the defect was rod like, about 1/2 micron in width with length varying from 1 to several microns. The defects were located in the notch area with defect counts often exceeding one thousand per wafer. Through the analysis of bitmap/visual defect overlay, it was shown these rod-like defects are yield killers. This was confirmed by cumulative probe yield maps which showed lower yields for dice located near the notch. In this paper, the mechanism for the rod- like defect formation will be described in detail. The techniques used to investigate the mechanism, defect characteristics, and yield impact will be discussed. The implementation of the solution to eliminate the rod defects will also be discussed.

Paper Details

Date Published: 27 August 1998
PDF: 9 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324417
Show Author Affiliations
Ray Goodner, MOS 12 Die Manufacturing (United States)
Ping Wang, MOS 12 Die Manufacturing (United States)
Fourmun Lee, MOS 12 Die Manufacturing (United States)
Ron Ceton, MOS 12 Die Manufacturing (United States)
John Rios, MOS 12 Die Manufacturing (United States)
Steve Howard, MOS 12 Die Manufacturing (United States)


Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

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