Share Email Print

Proceedings Paper

TOF-SIMS: a tool for material characterization, process control, and improvement in a wafer fab
Author(s): Paolo Fiorani; G. Margutti; Giuseppe Mariani; S. Matarazzo; Giuseppe Moccia
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A review ofthe applications of Time OfFlight-Secondary Ion Mass Spectroscopy (TOF-SIMS) to control various processes currenfly used in the manufacturing of semiconductor devices with the purpose of their improvement and the consequent enhancement ofthe wafer fab process yield and the IC's performance, is here reported. The fields explored by TOF-SIMS as a surface analysis technique were: diffusion, plasma etch and ash, ion implantation. As concerns diffusion, a work showing the detection of alkaly metals and the consequent, abnormal increase of the silicon oxide growth rate is reported. Another investigation demonstrates the presence of Aluminium contamination and the presence of a uniform, ultra-thin layer of fluorinated polymeric residues left on silicon wafers by a plasma etch process, not detected by the commonly used in-line techniques. In implant, analyses done before and after the ion implantation on the same wafer showed the contamination of Aluminium induced by the implanter itself Another work demonstrates the TOF-SIMS capability to control the implanters performance in separating the different isotopes of the implanted species, in the case ofboron implantation. Finally, in area, the analyses done to control the effectiveness of adhesion promoter for photoresist on Silicon wafer show that poor coverage of the resist adhesion promoter, which can cause the photoresist peeling, can be monitored by characteristic fragments detection by TOF-SIMS. 3

Keywords: TOF-SIMS, diffusion, plasma etch, implant, photo, polymers

Paper Details

Date Published: 27 August 1998
PDF: 7 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324415
Show Author Affiliations
Paolo Fiorani, Texas Instruments Italia SpA (Italy)
G. Margutti, Texas Instruments Italia SpA (Italy)
Giuseppe Mariani, Texas Instruments Italia SpA (Italy)
S. Matarazzo, Texas Instruments Italia SpA (Italy)
Giuseppe Moccia, Texas Instruments Italia SpA (Italy)

Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

© SPIE. Terms of Use
Back to Top