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Proceedings Paper

Contact potential difference methods for full wafer characterization of Si/SiO2 interface defects induced by plasma processing
Author(s): Piotr Edelman; A. Savchouk; M. Wilson; Lubek Jastrzebski; Jacek J. Lagowski; Christopher Nauka; Shawming Ma; Andrew M. Hoff; Damon K. DeBusk
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Paper Abstract

We present fundamentals and representative examples of fast non-contact full wafer characterization of oxide and silicon defects induced by plasma and thermal processing steps. Parametric and distribution results are obtained using the recently introduced 'COCOS' and surface doping methodologies that enhance contact potential difference and surface photovoltage methods. The measured parameters include flatband voltage, interface trap density, soft breakdown, oxide surface potential and recovery lifetime. We studied the effects of plasma metal etching and ashing, thermal oxidation, anneal ambients and nitridation methods.

Paper Details

Date Published: 27 August 1998
PDF: 11 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324400
Show Author Affiliations
Piotr Edelman, Semiconductor Diagnostics, Inc. (United States)
A. Savchouk, Semiconductor Diagnostics, Inc. (United States)
M. Wilson, Semiconductor Diagnostics, Inc. (United States)
Lubek Jastrzebski, Semiconductor Diagnostics, Inc. (United States)
Jacek J. Lagowski, Semiconductor Diagnostics, Inc. (United States)
Christopher Nauka, Hewlett-Packard Labs. (United States)
Shawming Ma, Hewlett-Packard Labs. (United States)
Andrew M. Hoff, Univ. of South Florida (United States)
Damon K. DeBusk, Cirent Semiconductor (United States)


Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

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