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Proceedings Paper

Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation
Author(s): Antonio Cacciato; Peter Schumbera; Arne Heessels; Jan R. Marc Luchies; M. Swaving
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Paper Abstract

In this paper, we investigate the possibility of using non- contact surface potential measurements (SPM) to study charging during plasma enhanced CVD TEOS deposition and high current ion implantation. It is found that SPM can be used for a first order and fast-feedback assessment of new recipes and tools as well as for routine monitoring of plasma damaging processes.

Paper Details

Date Published: 27 August 1998
PDF: 10 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324399
Show Author Affiliations
Antonio Cacciato, Philips Semiconductors (Netherlands)
Peter Schumbera, Philips Semiconductors (Netherlands)
Arne Heessels, Philips Semiconductors (Netherlands)
Jan R. Marc Luchies, Philips Semiconductors (Netherlands)
M. Swaving, CQM (Netherlands)


Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

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