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Proceedings Paper

Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques
Author(s): Hirofumi Shimizu; Chusuke Munakata
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Paper Abstract

An ac surface photovoltage, which is excited by a chopped photon beam in a semiconductor, is successfully applied for nondestructive detection of metallic contaminants on silicon wafer surfaces. In this report, the charge-induced phenomena at Si wafer surfaces due to various impurities and the mechanism are summarized. Metal (trivalent Al and Fe)- induced negative charges have been proposed at the top region of thermal oxide on the basis of the generally accepted oxide charge model.

Paper Details

Date Published: 27 August 1998
PDF: 10 pages
Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324397
Show Author Affiliations
Hirofumi Shimizu, Hitachi, Ltd. (Japan)
Chusuke Munakata, Tohoku Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 3509:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
Sergio A. Ajuria; Tim Z. Hossain, Editor(s)

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