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Proceedings Paper

Photolithography expert system for improved estimation of IC critical area
Author(s): Mark P.C. Chia; Gerard A. Allan; Anthony J. Walton
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Paper Abstract

In the manufacturing of IC the yield of the process is an important factor in estimating the cost. The calculation of critical area plays a key role in helping to determine the expected yield. This paper will demonstrate the use of a system, that will evolve into an expert system which can estimate the affects of photolithography on critical area. The system transforms critical area curves generated from the mask layout to more realistic curves related to the pattern on the wafer. It has been observed that this gives improved critical area estimates.

Paper Details

Date Published: 28 August 1998
PDF: 8 pages
Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); doi: 10.1117/12.324394
Show Author Affiliations
Mark P.C. Chia, Univ. of Edinburgh (United Kingdom)
Gerard A. Allan, Univ. of Edinburgh (United Kingdom)
Anthony J. Walton, Univ. of Edinburgh (United Kingdom)


Published in SPIE Proceedings Vol. 3510:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV
Sharad Prasad; Hans-Dieter Hartmann; Tohru Tsujide, Editor(s)

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