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Proceedings Paper

Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements
Author(s): Antonio Cacciato; S. Evseev; S. Vleeshouwers; I. Rink
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Paper Abstract

In this paper we study oxide deterioration caused by metal contamination using the Mercury-probe and the Surface Photovoltage techniques. It is found that deterioration caused by metal concentration as low as approximately equals 1010 cm-2 can be monitored performing stepped current measurements. This sensitivity makes the Mercury-probe technique attractive for fast-feedback evaluation of gate oxide integrity.

Paper Details

Date Published: 28 August 1998
PDF: 7 pages
Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); doi: 10.1117/12.324377
Show Author Affiliations
Antonio Cacciato, Philips Semiconductors (Netherlands)
S. Evseev, Philips Semiconductors (Netherlands)
S. Vleeshouwers, Philips Semiconductors (Netherlands)
I. Rink, Philips Semiconductors (Netherlands)

Published in SPIE Proceedings Vol. 3510:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV
Sharad Prasad; Hans-Dieter Hartmann; Tohru Tsujide, Editor(s)

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