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Proceedings Paper

Magnetoresistance of heterophase materials at high pressures
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Paper Abstract

The influence of Metal (M) and Semiconductor (SC) inclusions on magnetoresistance (MR), Hall effect R and temperature dependence of resistivity (rho) (T) of heterophase materials is investigated for a case, when the signs of magnetoresistance effects for these phases are opposite. According to model used the relative position of signs inversion borders for MR and temperature coefficient of (rho) (T) in coordinates resistivity - phase concentration ought to be independent on configuration of inclusions. For HgSe1-xSx crystals in the vicinity of pressure- induced structural phase transition the result of calculations coincide with the experimented data of MR and (rho) (T).

Paper Details

Date Published: 3 September 1998
PDF: 7 pages
Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); doi: 10.1117/12.324352
Show Author Affiliations
Vladimir V. Shchennikov, Institute of Metals Physics (Russia)


Published in SPIE Proceedings Vol. 3507:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV
Anthony J. Toprac; Kim Dang, Editor(s)

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