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Proceedings Paper

Real-time detection of chamber condition by observing the plasma spectrum intensity
Author(s): Ching-Wen Cho; Yuan-Ko Hwang; Po-Tao Chu; Y. S. Peng; Chia-Hsiang Chen
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Paper Abstract

Chamber leakage, transfer shift and particle on lower electrode are the major causes of yield loss during plasma etch process. However, there is still no effective tool for real-time detecting these abnormal chamber conditions. The experiment result demonstrate that the plasma spectrum intensities are strongly correlated to the chamber conditions. One can real-time monitor the chamber conditions by comparing the plasma spectrum intensity with specific control rules. This paper provides an effective method to detect the chamber condition by observing the plasma spectrum intensity.

Paper Details

Date Published: 3 September 1998
PDF: 8 pages
Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); doi: 10.1117/12.324351
Show Author Affiliations
Ching-Wen Cho, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yuan-Ko Hwang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Po-Tao Chu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Y. S. Peng, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chia-Hsiang Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 3507:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV
Anthony J. Toprac; Kim Dang, Editor(s)

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