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Proceedings Paper

Fast-ramp rapid vertical processor for 300-mm Si wafer processing
Author(s): Cole Porter; Allan Laser; Robert Herring; Pradeep Pandey
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Paper Abstract

Fast-ramp vertical furnace technology has been established on the 200-nm wafer platform providing higher capacity production, decreased cycle time and lower thermal budgets. Fast-ramp furnaces are capable of instantaneous temperature ramp rates up to 100 degrees C/min. This fast-ramp technology is now applied to 300-nm wafer processing on the SVG/Thermco Rapid Vertical Processor Vertical Furnace. 300- mm fast-ramp capability using the latest in real-time adaptive model based temperature control technology, Clairvoyant Control, is reported. Atmospheric Thermal Oxidation, LPCVD Nitride and Polysilicon Deposition, and LPCVD TEOS-based SiO2 Deposition results are discussed. 300- mm wafer Radial Delta Temperature dependence on temperature ramp rate, wafer pitch, and wafer support fixtures are discussed. Wafer throughput is calculated and reported. The Clairvoyant Control methodology of combining thermal, direct and virtually-sensed parameters to produce real-tim e estimation of wafer temperatures, thermal trajectory optimization, and feedback to minimize variations in film thickness and electrical properties is presented.

Paper Details

Date Published: 3 September 1998
PDF: 12 pages
Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); doi: 10.1117/12.324342
Show Author Affiliations
Cole Porter, Silicon Valley Group, Inc. (United States)
Allan Laser, Silicon Valley Group, Inc. (United States)
Robert Herring, Silicon Valley Group, Inc. (United States)
Pradeep Pandey, Voyan Technology Inc. (United States)


Published in SPIE Proceedings Vol. 3507:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV
Anthony J. Toprac; Kim Dang, Editor(s)

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