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Proceedings Paper

Galvanic etching of silicon
Author(s): Colin M. A. Ashruf; Patrick J. French; Pasqualina M. Sarro; John J. Kelly
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Paper Abstract

Electrochemical etching of silicon is commonly used for sensor fabrication processes. In fluoride-containing solutions porous silicon can be formed while in alkaline solutions silicon can be passivated by passing an anodic current through the silicon. For batch fabrication it is more convenient to have a contactless etch method. Galvanic etching can be used for this purpose. In this paper some general aspects of galvanic etching are considered. Examples of galvanically etched structures are presented.

Paper Details

Date Published: 31 August 1998
PDF: 6 pages
Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); doi: 10.1117/12.324329
Show Author Affiliations
Colin M. A. Ashruf, Delft Univ. of Technology (Netherlands)
Patrick J. French, Delft Univ. of Technology (Netherlands)
Pasqualina M. Sarro, Delft Univ. of Technology (Netherlands)
John J. Kelly, Utrecht Univ. (Netherlands)


Published in SPIE Proceedings Vol. 3511:
Micromachining and Microfabrication Process Technology IV
James H. Smith, Editor(s)

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