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Proceedings Paper

Anisotropic etching of (111)-oriented silicon and applications
Author(s): Bruce C. S. Chou; Chun-Nan Chen; Jin-Shown Shie; Wen-Hsiung Huang; Chien-Jen Chen
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Paper Abstract

Anisotropic etching characteristics of (111)-oriented silicon in alkaline solutions was studied. Through a spoke pattern, it was found that (110) planes have the highest etching rate rather than high-index ones such as (211) or (331). With a round open, the final emergent periphery is hexagonal. The six sidewalls are defined by other (111) facets from its crystal geometry with three inclining angles of 70.5 degrees and another three declining angles of 109.5 degrees. The etched bottom surface morphology was also investigated by SEM pictures observation. Results show that aqueous KOH solution results in smooth surface due to its higher etching rate of residual oxide existed in the silicon, while the other etchants such as hydrazine (N2H4) and tetramethyl ammonium hydroxide (TMAH) induce seriously wavy roughness. As an application example, floating single-crystal silicon (c-Si) structures were fabricated with some potential functions as thermopile, silicon bolometer, mass flow transducer and other force microsensors.

Paper Details

Date Published: 31 August 1998
PDF: 5 pages
Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); doi: 10.1117/12.324319
Show Author Affiliations
Bruce C. S. Chou, Precision Instrument Development Ctr. (Taiwan)
Chun-Nan Chen, National Chiao Tung Univ. (Taiwan)
Jin-Shown Shie, National Chiao Tung Univ. (Taiwan)
Wen-Hsiung Huang, Precision Instrument Development Ctr. (Taiwan)
Chien-Jen Chen, Precision Instrument Development Ctr. (Taiwan)


Published in SPIE Proceedings Vol. 3511:
Micromachining and Microfabrication Process Technology IV
James H. Smith, Editor(s)

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