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Proceedings Paper

Silicon surface micromachining by anhydrous HF gas-phase etching with methanol
Author(s): Won-Ick Jang; Chang-Auck Choi; Chang Seung Lee; Yoonshik Hong; Jong-Hyun Lee; Jong Tae Baek; Bo Woo Kim
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Paper Abstract

In silicon surface micromachining, the newly developed GPE (gas-phase etching) process was verified as a very effective method for the release of highly compliant microstructure. The developed GPE system with anhydrous HF (hydrogen fluoride) gas and CH3OH (methanol) vapor was characterized and its selective etching properties were discussed. P-doped polysilicon and SOI (silicon on insulator) substrate were used as a structural layer and TEOS (tetraethylorthosilicate) oxide and thermal oxide as a sacrificial layer. The etch rates of HF GPE were 400 angstrom/min for sacrificial TEOS oxide and 1000 angstrom/min for bulk TEOS oxide. For SOI structures, we adopted two step process of wet etch and HF GPE process to reduce the process time and confirmed relatively low etch rate of 55 angstrom/min for 1.8 micrometer-thick thermal oxide after 6:1 BHF etching for 15 minutes.

Paper Details

Date Published: 31 August 1998
PDF: 8 pages
Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); doi: 10.1117/12.324292
Show Author Affiliations
Won-Ick Jang, Electronics and Telecommunications Research Institute (South Korea)
Chang-Auck Choi, Electronics and Telecommunications Research Institute (South Korea)
Chang Seung Lee, Electronics and Telecommunications Research Institute (South Korea)
Yoonshik Hong, Electronics and Telecommunications Research Institute (South Korea)
Jong-Hyun Lee, Electronics and Telecommunications Research Institute (South Korea)
Jong Tae Baek, Electronics and Telecommunications Research Institute (South Korea)
Bo Woo Kim, Electronics and Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 3511:
Micromachining and Microfabrication Process Technology IV
James H. Smith, Editor(s)

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