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Proceedings Paper

Micromachined structure for Si transmission optical components
Author(s): Minoru Sasaki; Yuji Arai; Hitoshi Takebe; Wataru Kamada; Kazuhiro Hane
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Paper Abstract

Recent progress of the deep reactive ion etching explores several new applications of 3D structures of silicon devices. We have developed new optical and electrical devices having the penetrating holes to transmit the optical beam to the down stream. The transmission silicon position sensor having the divided cell type photodiode on the Si mesh structure is fabricated. The beam splitter is considered to be integrated in this device and a part of the incident light beam is detected by the photodiode. Using nearly same technique, the pinhole of the spatial filter surrounded by the divided cell type photodiode is fabricated to detect the relative position between the incident beam spot and the center pinhole.

Paper Details

Date Published: 2 September 1998
PDF: 6 pages
Proc. SPIE 3513, Microelectronic Structures and MEMS for Optical Processing IV, (2 September 1998); doi: 10.1117/12.324286
Show Author Affiliations
Minoru Sasaki, Tohoku Univ. (Japan)
Yuji Arai, Tohoku Univ. (Japan)
Hitoshi Takebe, Tohoku Univ. (Japan)
Wataru Kamada, Tohoku Univ. (Japan)
Kazuhiro Hane, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 3513:
Microelectronic Structures and MEMS for Optical Processing IV
M. Edward Motamedi; Hans Peter Herzig, Editor(s)

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