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Proceedings Paper

Stress measurement in MEMS using Raman spectroscopy
Author(s): Sherwin T. Animoto; Dick J. Chang; Andra D. Birkitt
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Paper Abstract

Raman spectroscopy is used as a non-contact method in measuring stresses at the surface of a crystalline structure or the crystalline-coated surface of an amorphous structure. The stress measurement capability is based on the relative frequency shift of Raman spectra when the crystal lattice is strained. The Raman spectroscopy has a resolution on the order of a few micrometer (micrometers ) which may be used to probe the local non-uniform stress distribution and thus address the material nonhomogeneity. This paper presents the Raman secular equation for general and cubic crystal systems and discusses the stress field effects to Raman frequency shifts and polarization. Experimental testing will include the calibration of the Raman signal versus mechanically applied stresses using single crystal strips, poly-silicon coatings deposited on different specimen configurations, and the stress measurements on a frequently used MEMS structure, cantilever beam, subject to electrostatic forces. Correlation of the experimental results with the analytical prediction will be addressed.

Paper Details

Date Published: 1 September 1998
PDF: 7 pages
Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); doi: 10.1117/12.324091
Show Author Affiliations
Sherwin T. Animoto, The Aerospace Corp. (United States)
Dick J. Chang, The Aerospace Corp. (United States)
Andra D. Birkitt, The Aerospace Corp. (United States)


Published in SPIE Proceedings Vol. 3512:
Materials and Device Characterization in Micromachining
Craig R. Friedrich; Yuli Vladimirsky, Editor(s)

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