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Proceedings Paper

Mask prototyping for ultradeep x-ray lithography: preliminary studies for mask blanks and high-aspect-ratio absorber patterns
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Paper Abstract

The use of hard X-ray energies for ultra-deep X-ray lithography requires a thorough re-investigation of all issues associated with the LIGA technology materials issues and processes, in particular for the manufacture of high-energy-X- ray masks. Calculations were performed to compare various mask blanks in particular thick KaptonR and thinned silicon blanks. Absorber pattern formation schemes have been investigated using UV contact printing or X-ray lithography with SU8 photoresist. SU8 photoresist also offers an improved X-ray sensitivity over PMMA resist. Resist patterns over 500 micron deep with aspect ratio over 10 and vertical sidewalls were achieved in SU-8, allowing the use of medium energy range X-rays to obtain high quality patterns of much greater resist thickness.

Paper Details

Date Published: 1 September 1998
PDF: 9 pages
Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); doi: 10.1117/12.324070
Show Author Affiliations
Chantal G. Khan Malek, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 3512:
Materials and Device Characterization in Micromachining
Craig R. Friedrich; Yuli Vladimirsky, Editor(s)

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