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Proceedings Paper

Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications
Author(s): Roberto R. Panepucci; Jose A. Diniz; Eduardo Carli; Peter J. Tatschi; Jacobus W. Swart
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Paper Abstract

An investigation of the influence of the process parameters pressure and flow on the room-temperature deposition of electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of silicon nitride has been performed. The suitability of these films for micromachining applications has been studied, in particular for the use with KOH:isopropyl:H2O etching solutions. The deposition rate and the effect of process parameters on the physical properties of the films, as-deposited and after KOH etching, were investigated. Buffered HF etch rate, refractive index, and the infrared absorption spectra, especially the Si-N peak absorption wavenumber, were studied. We have found that films that withstand KOH etching with little modification of their physical properties can be obtained at room-temperature for depositions with low flows and low process pressures.

Paper Details

Date Published: 1 September 1998
PDF: 6 pages
Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); doi: 10.1117/12.324050
Show Author Affiliations
Roberto R. Panepucci, Univ. de Campinas (Brazil)
Jose A. Diniz, Univ. de Campinas (Brazil)
Eduardo Carli, Univ. de Campinas (Brazil)
Peter J. Tatschi, Univ. de Campinas (Brazil)
Jacobus W. Swart, Univ. de Campinas (Brazil)


Published in SPIE Proceedings Vol. 3512:
Materials and Device Characterization in Micromachining
Craig R. Friedrich; Yuli Vladimirsky, Editor(s)

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