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Proceedings Paper

Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ)
Author(s): Ting-Chang Chang; P. T. Liu; M. F. Chou; Ming-Shih Tsai; Simon M. Sze; Chun-Yen Chang; F. Y. Shih; H. D. Huang
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Paper Abstract

Low density materials, such as hydrogen silsesquioxane (HSQ), can offer lower dielectric constants. With HSQ, a low value of K can be achieved if the density of Si-H bonding is maintained at a high level. However, the quality of HSQ films are degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the thermal stability of as-cured HSQ films are about 400 degrees Celsius. Both leakage current and dielectric constant of HSQ films rapidly increase with increasing annealing temperature. In this work, we have studied the use of hydrogen plasma to improve the quality of HSQ. The leakage current of HSQ decreases as the H2 plasma treatment time is increased. The role of hydrogen plasma is to passivate the surface of porous HSQ. In addition, the enhancement of the thermal stability of the HSQ film by fluorine ion implantation treatment was investigated. The implantation step can reduce the leakage current of HSQ with high annealing temperature.The enhancement of thermal stability of the HSQ film is due to the film densification by ion implantation treatment.

Paper Details

Date Published: 4 September 1998
PDF: 8 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324044
Show Author Affiliations
Ting-Chang Chang, National Nano Device Lab. (Taiwan)
P. T. Liu, National Chiao Tung Univ. (Taiwan)
M. F. Chou, National Chiao Tung Univ. (Taiwan)
Ming-Shih Tsai, National Nano Device Lab. (Taiwan)
Simon M. Sze, National Nano Device Lab. (Taiwan) and National Chiao Tung Univ. (Taiwan)
Chun-Yen Chang, National Chiao Tung Univ. (Taiwan)
F. Y. Shih, Dow Corning Taiwan Inc. (Taiwan)
H. D. Huang, Dow Corning Taiwan Inc. (Taiwan)


Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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