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Proceedings Paper

Novel AlCu: fill process for via applications
Author(s): Hans Helneder; Manfred Schneegans; K. Schober; Hans-Joachim Barth; U. Richter; G. Scheinbacher
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Paper Abstract

A novel 'hot only' AlCu(0.5) fill approach for via applications is presented. It combines an IMP Ti/TiN/Ti liner/wetting layer with a modified Al-fill process. The maximum wafer temperature during deposition is approximately 420 degrees Celsius. The unique filling characteristics allows via filling from bottom up without bridging or overhang formation at the top corners. The different influences of integration issues and hardware on the filling process are discussed. Electrical data (via resistance, product yield) are presented and compared to the standard cold/hot Al-fill and W- plug fill respectively.

Paper Details

Date Published: 4 September 1998
PDF: 8 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324038
Show Author Affiliations
Hans Helneder, Siemens AG (Germany)
Manfred Schneegans, Siemens AG (Germany)
K. Schober, Siemens AG (Germany)
Hans-Joachim Barth, Siemens AG (Germany)
U. Richter, Applied Materials GmbH (Germany)
G. Scheinbacher, Applied Materials GmbH (Germany)


Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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