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Proceedings Paper

Introduction to 300-mm/0.18-um to 0.13-um clean CMP system
Author(s): Manabu Tsujimura
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Paper Abstract

CMP, which has been accepted by users mainly as oxide planarization process of ILD in 200 mm/0.25 (mu) design rule, will be applied in 300 mm/0.18 (mu) - 0.13 (mu) design rule. Big features in this new stage are that in mechanical wise 'dry-in dry-out concept' is fully adopted and in process wise, various applications such as STI, metal damascene with Cu, low K materials etc. will be introduced. Accordingly, CMP is not anymore special process and higher performances like other dry processes will be required. The present situation and future points are herein reported.

Paper Details

Date Published: 4 September 1998
PDF: 12 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324030
Show Author Affiliations
Manabu Tsujimura, Ebara Corp. (Japan)


Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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