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Proceedings Paper

Novel two-step AI CMP process for overcoming pattern geometry effects
Author(s): Ming-Shih Tsai; Jias-Sheng Lin; Bau-Tong Dai
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Paper Abstract

It is important and critical to obtain reasonable removal rate, low polish non-uniformity, scratchless polished surface and no metal dishing and ILD erosion for aluminum damascene process with CMP. It is difficult to meet these requirements in a single-step polishing process because lower removal rate of titanium, known as polish-inert metal, results in significant over-polish of the aluminum features and severe metal dishing and ILD erosion should be obtained. Here we evaluate a novel 2-step polishing process to accomplish the damascene process more efficiently. First, the overburden aluminum was removed fast and uniformly. In our study, more than 3,000 nm/min removal rate, less than 10% polish non- uniformity and scratchless finished surface could be obtained. Next, by adjusting slurry pH, the removal rate of Al could be about as the same as that of Ti and that of SiO2 unchanged in the meantime. By this way, it relaxes the process window to overcome the problems of the pattern geometry effects.

Paper Details

Date Published: 4 September 1998
PDF: 8 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324029
Show Author Affiliations
Ming-Shih Tsai, National Nano Device Lab. (Taiwan)
Jias-Sheng Lin, National Nano Device Lab. (Taiwan)
Bau-Tong Dai, National Nano Device Lab. (Taiwan)


Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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