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Proceedings Paper

Characterization of pattern density and the metal stack composition on chlorine residues from the metal etch process
Author(s): Sang Yee Loong; Hian Kee Lee; Mei-Sheng Zhou; Lap Hung Chan; Vayalakkara Premachandran
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Paper Abstract

The corrosion of aluminum metal from chlorine plasma etching causes major backend interconnects failure especially when the metal line-width shrinks to sub-half micron geometry. The reason for the corrosion is related to the low volatility and the insufficient removal of residual chlorine by-products which leads to the galvanic attack of the etched metal lines. In this paper, a systematic Capillary Electrophoresis analysis of the residual chlorine on wafer surfaces is presented, the experimental results and analysis show that the amount of chlorine residues on wafer surfaces is strongly dependence on the metal pattern density and the metal stack composition.

Paper Details

Date Published: 4 September 1998
PDF: 11 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324025
Show Author Affiliations
Sang Yee Loong, National Univ. of Singapore and Chartered Semiconductor Manufacturing Ltd. (Singapore)
Hian Kee Lee, National Univ. of Singapore (Singapore)
Mei-Sheng Zhou, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Lap Hung Chan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Vayalakkara Premachandran, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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