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Proceedings Paper

Damascene Cu-interconnect formation in benzocyclobuten (BCB) film using a novel end-point monitoring technique
Author(s): Yoshihiro Hayashi; Takahiro Onodera; Shinobu Saitoh; Jyun Kawahara
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Paper Abstract

Dual-damascene Cu-interconnect is fabricated in a low-k, divinylsiloxane-benzocyclobuten (DVS-BCB) film to reduce signal transmission delay among circuit-blocks on a chip. One of difficulties is how to make the patterns of via-holes and interconnect-trenches in the DVS-BCB films using photo-resist masks precisely. We have developed a new BCB patterning process such as 'Simultaneous resist-etch-back' (SRECK) process, in which both of the patterned photo-resist film and the DVS-BCB film are etched back simultaneously to transfer the resist-patterns to the BCB film. Since the DVS-BCB film contains siloxane-group, the intensity of Si-related Emission Light (SEL) abruptly increases just after complete pattern transfer to the DVS-BCB. Using the SRECK process with SEL- monitoring, the dual-damascene Cu-interconnects are fabricated in the DVS-BCB film with precise dimension control. Finally, the BCB/Cu-interconnects are demonstrated in the top-layered global interconnects on the advanced MPUs.

Paper Details

Date Published: 4 September 1998
PDF: 12 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324023
Show Author Affiliations
Yoshihiro Hayashi, NEC Corp. (Japan)
Takahiro Onodera, NEC Corp. (Japan)
Shinobu Saitoh, NEC Corp. (Japan)
Jyun Kawahara, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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