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Proceedings Paper

Experimental characterization of CMOS APS imagers designed using two different technologies
Author(s): Pierre Magnan; Cyril Cavadore; Anne Gautrand; Yavuz Degerli; Francis Lavernhe; Jean A. Farre; Olivier Saint-Pe; Robert Davancens; Michel Tulet
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Paper Abstract

This paper presents measurements results performed on CMOS APS imagers implemented on two different technologies. Both PhotoMOS (PM) and PhotoDiode (PD) structures have been designed by the CIMI-SUPAERO group and high APS readout rate measurements have been performed by Matra Marconi Space. Every circuit also includes the pixel's address decoders and the readout circuit required to perform on-chip correlated double sampling and double delta sampling. The aim of this paper is to compare performances of those arrays operating at 5 Volts in terms of dark current, quantum efficiency, conversion gain, dynamic range.

Paper Details

Date Published: 7 September 1998
PDF: 11 pages
Proc. SPIE 3410, Advanced Focal Plane Arrays and Electronic Cameras II, (7 September 1998); doi: 10.1117/12.324021
Show Author Affiliations
Pierre Magnan, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Cyril Cavadore, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (Germany)
Anne Gautrand, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Yavuz Degerli, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Francis Lavernhe, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Jean A. Farre, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Olivier Saint-Pe, Matra Marconi Space (France)
Robert Davancens, Matra Marconi Space (France)
Michel Tulet, Matra Marconi Space (France)


Published in SPIE Proceedings Vol. 3410:
Advanced Focal Plane Arrays and Electronic Cameras II
Thierry M. Bernard, Editor(s)

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