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Proceedings Paper

Novel CMOS electron imaging sensor
Author(s): Hod Finkelstein; Ran Ginosar
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Paper Abstract

Electron detector arrays are employed in numerous imaging applications, from low-light-light-level imaging to astronomy, electron microscopy, and nuclear instrumentation. The majority of these detectors are fabricated with dedicated processes, use the semiconductor as a stopping and detecting layer, and utilize CCD-type charge transfer and detection. We present a new detector, wherein electrons are stopped by an exposed metal layer, and are subsequently detected either through charge collection in a CCD-type well, or by a measurement of a potential drop across a capacitor which is discharged by these electrons. Spatial localization is achieved by use of two metal planes, one for protecting the underlying gate structures, and another, with metal pixel structures, for 2D detection. The new device does not suffer from semiconductor non-uniformities, and blooming effects are minimized. It is effective for electrons with energies of 2-6 keV. The unique structure makes it possible to achieve a high fill factor, and to incorporate on-chip processing. An imaging chip implementing several test structures incorporating the new detector has been fabricated using a 2 micron double-poly double-metal process, and tested inside a JEOL 640 electron microscope.

Paper Details

Date Published: 7 September 1998
PDF: 12 pages
Proc. SPIE 3410, Advanced Focal Plane Arrays and Electronic Cameras II, (7 September 1998); doi: 10.1117/12.324019
Show Author Affiliations
Hod Finkelstein, Technion--Israel Institute of Technology (Israel)
Ran Ginosar, Technion--Israel Institute of Technology (Israel)

Published in SPIE Proceedings Vol. 3410:
Advanced Focal Plane Arrays and Electronic Cameras II
Thierry M. Bernard, Editor(s)

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