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Proceedings Paper

CMOS active pixel image sensor with CCD performance
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Paper Abstract

A color CMOS image sensor has been developed which meets the performance of mainstream CCDs. The pixel combines a high fill factor with a low diode capacitance. This yields a high light sensitivity, expressed by the conversion gain of 9 (mu) V/electron and the quantum efficiency fill factor product of 28 percent. The temporal noise is 63 electrons, and the dynamic range is 67 dB. An offset compensation circuit in the column amplifiers limits the peak-to-peak fixed pattern noise to 0.15 percent of the saturation voltage.

Paper Details

Date Published: 7 September 1998
PDF: 9 pages
Proc. SPIE 3410, Advanced Focal Plane Arrays and Electronic Cameras II, (7 September 1998); doi: 10.1117/12.323997
Show Author Affiliations
Guy Meynants, Interuniv. Microelectronics Ctr. (Belgium)
Bart Dierickx, Interuniv. Microelectronics Ctr. (Belgium)
Danny Scheffer, Interuniv. Microelectronics Ctr. (Belgium)


Published in SPIE Proceedings Vol. 3410:
Advanced Focal Plane Arrays and Electronic Cameras II
Thierry M. Bernard, Editor(s)

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