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Proceedings Paper

Optimum bandgap profile for a high-efficiency p-i-n a-Si: H solar cell
Author(s): Mohamed Bashir Saleh; Tawfik A. Namour; Ahmed K. Aboul Seoud; Sanaa Moustafa
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Paper Abstract

High efficiency is the key to large-scale applicability of photovoltaic systems. The efficiency depends on material fabrication and design parameters. One of the most successful approaches to improve efficiency is to aid the drift of minority carriers by a stronger electric field. This can be effectively accomplished through bandgap profiling. In this paper, we have developed a model to describe bandgap profile, the electric field and the current-voltage characteristics of p-i-n solar cell. A technique for optimizing graded bandgap profile in p-i-n aSi:H solar cell has been developed using a Fletcher-Powell minimization technique. The parameters to be optimized are replaced by independent variables without constraints. The variables include the coefficients of a third order equation describing the bandgap profile under consideration. The method allows a simultaneous optimization of parameters leading to maximization of solar cell efficiency. It suggests a new cell design criterion in terms of optimum and bandgap profile.

Paper Details

Date Published: 4 September 1998
PDF: 6 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323990
Show Author Affiliations
Mohamed Bashir Saleh, Arab Academy for Science and Technology (Egypt)
Tawfik A. Namour, Univ. of Alexandria (Egypt)
Ahmed K. Aboul Seoud, Univ. of Alexandria (Egypt)
Sanaa Moustafa, Cooperative de Petroleum Society (Egypt)

Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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