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Proceedings Paper

BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region
Author(s): Thomas Zimmer; M. Ndoye; N. Lewis; J. B. Duluc; Helene Fremont; Jean Paul Dom
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Paper Abstract

This paper describes a new method to improve the base- collector breakdown voltage of high frequency NPN bipolar transistor. It consists of introducing a suitable P floating region in the N collector by ion implantation or by molecular beam epitaxy. The basic profile of the intrinsic transistor is not changed. Computer device simulations show that a nearly 20% improvement of the base-collector breakdown voltage can be achieved in a common emitter configuration. Additional advantages are a reduction of the multiplication factor and an enhanced impact-ionization base current reversal voltage.

Paper Details

Date Published: 4 September 1998
PDF: 8 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323988
Show Author Affiliations
Thomas Zimmer, Univ. de Bordeaux I (France)
M. Ndoye, Univ. de Bordeaux I (France)
N. Lewis, Univ. de Bordeaux I (France)
J. B. Duluc, Univ. de Bordeaux I (France)
Helene Fremont, Univ. de Bordeaux I (France)
Jean Paul Dom, Univ. de Bordeaux I (France)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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