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Proceedings Paper

Production of ohmic contacts to AlxGa1-xAs of the n- and p-type conductivity with surface cleaning in atomic hydrogen
Author(s): A. S. Vishnyakov; Valerii A. Kagadei; N. I. Kozhinova; L. M. Romas; Dmitry I. Proskurovsky
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Paper Abstract

Production the high-quality ohmic contacts to AlGaAs layers with high contents AlAs (more than 25 - 30%) is a complicated and still incompletely resolved problem. This is connected with the presence of a thick surface layer of native oxide. The possibility of producing contacts to AlxGa1-xAs with the use of preliminary cleaning of the surface in atomic hydrogen has been investigated. Used in the experiment were n- type (approximately 65% AlAs) and p-type (approximately 35% AlAs) AlxGa1-xAs substrates. The cleaning of the specimen surface in atomic hydrogen (T equals 300 - 400 C, t equals 10 - 90 min) and the deposition of the contact metal (Au/AuGeNi/AuGe for n-type, and Au/AuZn/Au for p-type) were conducted in a unified vacuum cycle. Annealing in the ambience of hydrogen was produced under T equals 400 - 520 C. The technological conditions required to realize the cleaning of the surface of AlxGa1-xAs in a thermal film deposition system with a moderate vacuum has been investigated. The AES method was used to find the cleaning modes that allow removal of the oxide film with the stoichiometric composition of AlxGa1-xAs retained. It has been shown that the operations of cleaning and metal deposition combined in a unified vacuum cycle make it possible to produce a high-quality low- resistance contact showing high adhesion.

Paper Details

Date Published: 4 September 1998
PDF: 6 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323987
Show Author Affiliations
A. S. Vishnyakov, Research Institute of Semiconductor Devices (Russia)
Valerii A. Kagadei, Research Institute of Semiconductor Devices (Russia)
N. I. Kozhinova, Research Institute of Semiconductor Devices (Russia)
L. M. Romas, Research Institute of Semiconductor Devices (Russia)
Dmitry I. Proskurovsky, Institute of High Current Electronics (Russia)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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