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Proceedings Paper

Improved analytic models and efficient parameter extraction for computationally efficient 1D and 2D ion implantation modeling
Author(s): Ganesh Balamurugan; Borna J. Obradovic; Geng Wang; Yidong Chen; Al F. Tasch
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Paper Abstract

Computationally efficient ion implantation modeling is highly essential for efficient silicon device technology development and improved process control. Indeed, analytic models are particularly desirable for two-dimensional simulations, which are very expensive in terms of computation time. This paper describes analytic models for both the impurity and the damage profiles in one and two dimensions. Legendre polynomials are used as model functions and their orthogonality property is exploited to simplify and allow the automation of parameter extraction. Using 14 Legendre polynomials (16 model parameters), a wide variety of impurity and damage profiles can be modeled accurately. In addition, the shortcomings of the conventional superposition approach to 2-D modeling are explained, and a modified approach based on dose-splitting is proposed. The 2-D impurity and damage profiles generated by this modified superposition approach are shown to have very good agreement with the physically based and experimentally verified Monte-Carlo simulator, UT-MARLOWE. Computation times can be reduced by approximately a factor of 50 without sacrificing accuracy when the analytic approach is used instead of a Monte-Carlo simulation.

Paper Details

Date Published: 4 September 1998
PDF: 9 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323985
Show Author Affiliations
Ganesh Balamurugan, Univ. of Texas at Austin (United States)
Borna J. Obradovic, Univ. of Texas at Austin (United States)
Geng Wang, Univ. of Texas at Austin (United States)
Yidong Chen, Univ. of Texas at Austin (United States)
Al F. Tasch, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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