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Proceedings Paper

Ultrathin film fully depleted CMOS/SIMOX technology with selective CVD tungsten and its application to LSIs
Author(s): Yasuhiro Sato; Toshihiko Kosugi; Hiromu Ishii
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Paper Abstract

Selective W-CVD technology with hydrogenation and hydrogen- termination treatment was developed to reduce source/drain sheet resistance in ultra-thin-film fully-depleted CMOSFET's/SIMOX, and it was applied to 0.25-micrometer-gate gate-array LSIs. It is clarified that this technology ensures single-contact cells, which are vital for higher packing density, with no degradation of device characteristics, circuit performance, and LSI yield. Moreover, recent results for devices with a W-covered gate/source/drain are presented.

Paper Details

Date Published: 4 September 1998
PDF: 12 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323974
Show Author Affiliations
Yasuhiro Sato, NTT System Electronics Labs. (Japan)
Toshihiko Kosugi, NIT Wireless System Labs. (Japan)
Hiromu Ishii, NTT System Electronics Labs. (Japan)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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