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Proceedings Paper

Advanced gate technology for sub-0.25-μm CMOSFETs
Author(s): Tsu-Jae King
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Paper Abstract

As COOS technology is scaled into the sub-0.25 micrometer regime, the poly-Si gate depletion effect becomes more problematic. This paper discusses various technological approaches to eliminating this effect. It is shown that poly- SiGe is an especially promising alternative gate material because it can be integrated into an existing COOS process with relative ease. As compared to poly-Si gate technology, poly-Si0.8Ge0.2 gate technology provides improved resistance to the gate-depletion effect, improved tradeoff between the gate-depletion effect and the boron penetration problem for p-channel devices, and superior device reliability. The viability of poly-Si0.8Ge0.2 as a gate material for sub-0.25 micrometer COOS technology is demonstrated in the fabrication of 0.1 micrometer channel- length MOSFETs.

Paper Details

Date Published: 4 September 1998
PDF: 8 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323966
Show Author Affiliations
Tsu-Jae King, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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