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Proceedings Paper

Merged 2.5-V and 3.3-V 0.25-um CMOS technology
Author(s): Isik C. Kizilyalli; Robert Y.S. Huang; D. Hwang; Brittin C. Kane; R. Ashton; S. Kuehne; X. Deng; Michael S. Twiford; E. P. Martin; D. Shuttleworth; K. Wittingham; S. Lytle; Yi Ma; Pradip K. Roy; Leonard J. Olmer; Hem Vaidya; F. Li; X. Li; Eric Persson; A. Massengale; L. Stirling; D. Chesire; K. Steiner; Rafael N. Barba; Morgan J. Thoma; William T. Cochran
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Paper Abstract

In this paper a merged 2.5 V and 3.3 V high performance 0.25 micrometer CMOS technology is presented. Issues relevant to manufacturing, such as Leff control and the impact of plasma-assisted back-end dielectric depositions on gate oxide reliability and isolation, are discussed. This technology features a 50 angstrom gate oxide, high-energy implant scheme, n+-polysilicon gate, and 4/5 levels of metal. An improvement of 1.45X in circuit performance and 4X in packing density is achieved over our 0.35 micrometer CMOS technology. The nominal ring oscillator delay time is 38(39) ps for 3.3(2.5) V operation.

Paper Details

Date Published: 4 September 1998
PDF: 7 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323964
Show Author Affiliations
Isik C. Kizilyalli, Lucent Technologies/Bell Labs. (United States)
Robert Y.S. Huang, Lucent Technologies/Bell Labs. (United States)
D. Hwang, Lucent Technologies/Bell Labs. (United States)
Brittin C. Kane, Lucent Technologies/Bell Labs. (United States)
R. Ashton, Lucent Technologies/Bell Labs. (United States)
S. Kuehne, Lucent Technologies/Bell Labs. (United States)
X. Deng, Lucent Technologies/Bell Labs. (United States)
Michael S. Twiford, Lucent Technologies/Bell Labs. (United States)
E. P. Martin, Lucent Technologies/Bell Labs. (United States)
D. Shuttleworth, Lucent Technologies/Bell Labs. (United States)
K. Wittingham, Lucent Technologies/Bell Labs. (United States)
S. Lytle, Lucent Technologies/Bell Labs. (United States)
Yi Ma, Lucent Technologies/Bell Labs. (United States)
Pradip K. Roy, Lucent Technologies/Bell Labs. (United States)
Leonard J. Olmer, Lucent Technologies/Bell Labs. (United States)
Hem Vaidya, Lucent Technologies/Bell Labs. (United States)
F. Li, Lucent Technologies/Bell Labs. (United States)
X. Li, Lucent Technologies/Bell Labs. (United States)
Eric Persson, Lucent Technologies/Bell Labs. (United States)
A. Massengale, Lucent Technologies/Bell Labs. (United States)
L. Stirling, Lucent Technologies/Bell Labs. (United States)
D. Chesire, Lucent Technologies/Bell Labs. (United States)
K. Steiner, Lucent Technologies/Bell Labs. (United States)
Rafael N. Barba, Lucent Technologies/Bell Labs. (United States)
Morgan J. Thoma, Lucent Technologies/Bell Labs. (United States)
William T. Cochran, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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