Share Email Print
cover

Proceedings Paper

Manufacturing multilevel metal CMOS with deuterium anneals for improved hot-carrier reliablility
Author(s): Isik C. Kizilyalli; G. Abeln; Zhi Chen; Gary R. Weber; F. Register; Edward B. Harris; Sundar Chetlur; G. S. Higashi; M. Schofieled; Sidhartha Sen; B. Kotzias; Pradip K. Roy; Joseph W. Lyding; Karl Hess
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper discuses new experimental findings critical for process integration of deuterium post-metal anneals to manufacturing multi-level metal CMOS integrated circuits. Detailed account of the optimization experiments using the deuterium process is given varying temperature (400 - 450 C), time (0.5 - 5 hr), and ambient (10 - 100% D2). It is shown that the deuterium/hydrogen isotope effect is a general property of MOS wear-out by evaluating many transistor structures from various CMOS technologies. Physical insight into the transistor degradation mechanisms is provided via fundamental STM Si-H(D) desorption experiments and physics based simulations.

Paper Details

Date Published: 4 September 1998
PDF: 6 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323960
Show Author Affiliations
Isik C. Kizilyalli, Lucent Technologies/Bell Labs. (United States)
G. Abeln, Univ. of Illinois/Urbana-Champaign (United States)
Zhi Chen, Univ. of Illinois/Urbana-Champaign (United States)
Gary R. Weber, Lucent Technologies/Bell Labs. (United States)
F. Register, Univ. of Illinois/Urbana-Champaign (United States)
Edward B. Harris, Lucent Technologies/Bell Labs. (United States)
Sundar Chetlur, Lucent Technologies/Bell Labs. (United States)
G. S. Higashi, Lucent Technologies/Bell Labs. (United States)
M. Schofieled, Lucent Technologies/Bell Labs. (United States)
Sidhartha Sen, Lucent Technologies/Bell Labs. (United States)
B. Kotzias, Lucent Technologies/Bell Labs. (United States)
Pradip K. Roy, Lucent Technologies/Bell Labs. (United States)
Joseph W. Lyding, Univ. of Illinois/Urbana-Champaign (United States)
Karl Hess, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

© SPIE. Terms of Use
Back to Top