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Proceedings Paper

Manufacturing multilevel metal CMOS with deuterium anneals for improved hot-carrier reliablility
Author(s): Isik C. Kizilyalli; G. Abeln; Zhi Chen; Gary R. Weber; F. Register; Edward B. Harris; Sundar Chetlur; G. S. Higashi; M. Schofieled; Sidhartha Sen; B. Kotzias; Pradip K. Roy; Joseph W. Lyding; Karl Hess
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Paper Abstract

This paper discuses new experimental findings critical for process integration of deuterium post-metal anneals to manufacturing multi-level metal CMOS integrated circuits. Detailed account of the optimization experiments using the deuterium process is given varying temperature (400 - 450 C), time (0.5 - 5 hr), and ambient (10 - 100% D2). It is shown that the deuterium/hydrogen isotope effect is a general property of MOS wear-out by evaluating many transistor structures from various CMOS technologies. Physical insight into the transistor degradation mechanisms is provided via fundamental STM Si-H(D) desorption experiments and physics based simulations.

Paper Details

Date Published: 4 September 1998
PDF: 6 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323960
Show Author Affiliations
Isik C. Kizilyalli, Lucent Technologies/Bell Labs. (United States)
G. Abeln, Univ. of Illinois/Urbana-Champaign (United States)
Zhi Chen, Univ. of Illinois/Urbana-Champaign (United States)
Gary R. Weber, Lucent Technologies/Bell Labs. (United States)
F. Register, Univ. of Illinois/Urbana-Champaign (United States)
Edward B. Harris, Lucent Technologies/Bell Labs. (United States)
Sundar Chetlur, Lucent Technologies/Bell Labs. (United States)
G. S. Higashi, Lucent Technologies/Bell Labs. (United States)
M. Schofieled, Lucent Technologies/Bell Labs. (United States)
Sidhartha Sen, Lucent Technologies/Bell Labs. (United States)
B. Kotzias, Lucent Technologies/Bell Labs. (United States)
Pradip K. Roy, Lucent Technologies/Bell Labs. (United States)
Joseph W. Lyding, Univ. of Illinois/Urbana-Champaign (United States)
Karl Hess, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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