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Proceedings Paper

Self-aligned silicide process technology for sub-0.25-μm geometries
Author(s): Ted Regan White; Dave Kolar; Mohamed Jahanbani; Larry E. Frisa; Rajan Nagabushnam; Harry Chuang; Paul Tsui; Jeff Cope; Larry Pulvirent; Scott Bolton
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Paper Abstract

This work compares the extendibility of titanium with pre- deposition amorphizing implant (PAI) and cobalt salicides to sub-0.25 micrometer technologies. Cobalt salicide has low sheet resistance and a tighter distribution of sheet resistances than titanium salicide with PAI for narrow linewidths. The reaction of cobalt with silicon is not affected by dopants in the silicon as the reaction of titanium is. Less cobalt need be deposited than titanium for a given sheet resistance target. Cobalt salicide requires fewer process steps than titanium salicide with PAI. Cobalt salicide has lower diodes for shallow junctions, requires a smaller thermal budget, and provides a lower contact resistances than titanium salicide. Thus, cobalt salicide process technology has better process control, is more compatible with sub-0.25 micrometer devices, and more compatible with interlayer connections than titanium salicide with PAI.

Paper Details

Date Published: 4 September 1998
PDF: 8 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323957
Show Author Affiliations
Ted Regan White, Motorola (United States)
Dave Kolar, Motorola (United States)
Mohamed Jahanbani, Motorola (United States)
Larry E. Frisa, Motorola (United States)
Rajan Nagabushnam, Motorola (United States)
Harry Chuang, Motorola (United States)
Paul Tsui, Motorola (United States)
Jeff Cope, Motorola (United States)
Larry Pulvirent, Motorola (United States)
Scott Bolton, Motorola (United States)


Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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