Share Email Print
cover

Proceedings Paper

Efficient process development for bulk silicon etching using cellular automata simulation techniques
Author(s): James Marchetti; Yie He; Olaf Than; Sandeep Akkaraju
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper describes cellular automata simulation techniques used to predict the anisotropic etching of single-crystal silicon. In particular, this paper will focus on the application of wet etching of silicon wafers using typical anisotropic etchants such as KOH, TMAH, and EDP. Achieving a desired final 3D geometry of etch silicon wafers often is difficult without requiring a number of fabrication design iterations. The result is wasted time and resources. AnisE, a tool to simulate anisotropic etching of silicon wafers using cellular automata simulation, was developed in order to efficiently prototype and manufacture MEMS devices. AnisE has been shown to effectively decrease device development time and costs by up to 50% and 60%, respectively.

Paper Details

Date Published: 8 September 1998
PDF: 9 pages
Proc. SPIE 3514, Micromachined Devices and Components IV, (8 September 1998); doi: 10.1117/12.323900
Show Author Affiliations
James Marchetti, IntelliSense Corp. (United States)
Yie He, IntelliSense Corp. (United States)
Olaf Than
Sandeep Akkaraju, IntelliSense Corp. (United States)


Published in SPIE Proceedings Vol. 3514:
Micromachined Devices and Components IV
Patrick J. French; Kevin H. Chau, Editor(s)

© SPIE. Terms of Use
Back to Top