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Proceedings Paper

Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure
Author(s): Wen Shen Li; Z. X. Shen; De Zen Shen; Xiwu Fan
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Paper Abstract

Micro-Raman and photoluminescence (PL) studies of ZnxCd1-xSe (x equals 0.68) thin film have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives a pressure coefficients of (alpha) equals 0.083 eV/GPa and (beta) equals 0.0052 eV/GPa2. The second-order pressure coefficient (beta) of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. In the Raman spectra, the first-order pressure coefficient was also calculated by least-square fit. The low energy tail of the longitudinal-optical phonon was found to develop with pressure for the first time, and the line shape change with pressure is interpreted in terms of a `spatial correlation' model.

Paper Details

Date Published: 23 September 1998
PDF: 5 pages
Proc. SPIE 3424, Inorganic Optical Materials, (23 September 1998); doi: 10.1117/12.323752
Show Author Affiliations
Wen Shen Li, National Univ. of Singapore (Singapore)
Z. X. Shen, National Univ. of Singapore (Singapore)
De Zen Shen, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 3424:
Inorganic Optical Materials
Alexander J. Marker, Editor(s)

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