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Proceedings Paper

Domain switch in silicon-nematic-ITO structure
Author(s): Ivanovich Mikhola Gritsenko; Sergey Ivanovich Kucheev
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Paper Abstract

The nonlinear electrooptic effect in the silicon substrate- nematic-ITO structure is described. It is supposed that a domain switching of a director is induced by a local accumulation and spreading of injected charge within a nematic layer. The exciting centers of a domain can be the defects of silicon surface and the laser irradiation.

Paper Details

Date Published: 23 September 1998
PDF: 3 pages
Proc. SPIE 3488, Nonlinear Optics of Liquid and Photorefractive Crystals II, (23 September 1998); doi: 10.1117/12.323723
Show Author Affiliations
Ivanovich Mikhola Gritsenko, Teacher's Training Institute (Ukraine)
Sergey Ivanovich Kucheev, Teacher's Training Institute (Ukraine)


Published in SPIE Proceedings Vol. 3488:
Nonlinear Optics of Liquid and Photorefractive Crystals II
Gertruda V. Klimusheva, Editor(s)

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