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Proceedings Paper

Multiphonon decay in halide and oxide glasses at high-excitation density: a comparison
Author(s): Francois E. Auzel; Fabienne Pelle
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Paper Abstract

The scientific and applied interest for so-called IR glasses, the very subject of this conference, are exclusively linked to such glass low phonon energy. It provides their IR transparency and good quantum efficiency when doped, trough reduced multiphonon interactions. Recently we have shown that multiphonon decay in oxide glasses could be reduced at high excitation level and that this was linked with a saturation of the accepting vibration modes. The saturation coming from a common phonon diffusion volume for two excited ions. In this paper, after recalling the basics of multiphonon nonradiative decay, we shall present recent result on rare-earth doped halide glasses in comparison with oxide glasses brings a different behavior with respect to oxide glasses: sometimes no saturation ca be observed for certain levels because accepting modes seem not to be excited whatever the phonon diffusion volume in the halide glass. In fact we show that up-conversion do play a role in fluoride glasses partially masking the phonon bottleneck. Because the key parameter for such multiphonon process is the ratio between inter electronic levels energy gap and the phonon energy, halide glasses can be said to behave homothetically with oxide glasses. This confirms a likely generalization for our theoretical approach and allows to predict likely similar behavior for other multiphonon processes described by energy gap laws such as sidebands and RI absorption bleaching, phonon assisted energy transfer saturation.

Paper Details

Date Published: 28 September 1998
PDF: 9 pages
Proc. SPIE 3416, Infrared Glass Optical Fibers and Their Applications, (28 September 1998); doi: 10.1117/12.323402
Show Author Affiliations
Francois E. Auzel, France Telecom (France)
Fabienne Pelle, France Telecom (France)

Published in SPIE Proceedings Vol. 3416:
Infrared Glass Optical Fibers and Their Applications
Mohammed Saad, Editor(s)

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